Infineon Technologies - IPB80N06S209ATMA2

KEY Part #: K6419418

IPB80N06S209ATMA2 Utu (USD) [110838Stock Ngahau]

  • 1 pcs$0.33371
  • 1,000 pcs$0.31781

Te waahanga waahanga:
IPB80N06S209ATMA2
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 55V 80A TO263-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhou - IGBT - Mahi, Transistors - Whakahoahoa Whakahoahoa, Diode - Zener - Kotahi, Transistors - JFET, Transistors - Takenga Motuhake, Tauhoko - DIACs, SIDACs and Te Tauira P taraihi Mana ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB80N06S209ATMA2 Nga Hua Hua

Te waahanga waahanga : IPB80N06S209ATMA2
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 55V 80A TO263-3
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 55V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 80A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 8.8 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 4V @ 125µA
Kaari Gate (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2360pF @ 25V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 190W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-TO263-3-2
Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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