VS-GB200TH120N Utu (USD) [197Stock Ngahau]
- 1 pcs$234.46046
- 12 pcs$216.03837
- Te waahanga waahanga:
- VS-GB200TH120N
- Kaihanga:
- Vishay Semiconductor Diodes Division
- Whakaahuatanga Taipitopito:
- IGBT 1200V 360A 1136W INT-A-PAK.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Kaiwhiwhi - Kotahi, Transistors - JFET, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - Bipolar (BJT) - Arrays, Diode - Nga Kete Aiana, Diode - Zener - Tuhinga, Transistors - Bipolar (BJT) - Kotahi, I mua i te m and Transistors - Takenga Motuhake ...
- Whakapai Tinana:
- We specialize in Vishay Semiconductor Diodes Division VS-GB200TH120N electronic components. VS-GB200TH120N can be shipped within 24 hours after order. If you have any demands for VS-GB200TH120N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GB200TH120N Nga Hua Hua
Te waahanga waahanga :
VS-GB200TH120N
Kaihanga :
Vishay Semiconductor Diodes Division
Whakaahuatanga :
IGBT 1200V 360A 1136W INT-A-PAK
Toa :
-
Wāhanga wahi :
Active
Momo IGBT :
-
Hōutuutu :
Half Bridge
Paati - Whakahoki Kaikaha Kohikohi (Max) :
1200V
Te Oranga - Te Kaikohi (Ic) (Max) :
360A
Te Mana - Max :
1136W
Vce (on) (Max) @ Vge, Ic :
2.35V @ 15V, 200A
I tenei wa - Kohinga Kohinga (Max) :
5mA
Te Mahinga Whakauru (Kati) @ Vce :
14.9nF @ 25V
Whakautu :
Standard
NTC Thermistor :
No
Taumaha Mahi :
150°C (TJ)
Momo Momo :
Chassis Mount
Paepae / Take :
Double INT-A-PAK (3 + 4)
Paetukutuku Pūrere Kaiwhakarato :
Double INT-A-PAK
Nga Pūrongo Hou
Kia Korero Ma Te Korero
-
VS-ETL015Y120H
Vishay Semiconductor Diodes Division
IGBT 1200V 22A 89W EMIPAK-2B. Rectifiers 15A Dbl Interleaved Boost Converter
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