SIHB12N60E-GE3 Utu (USD) [41018Stock Ngahau]
- 1 pcs$0.95327
- 10 pcs$0.86296
- 100 pcs$0.69334
- 500 pcs$0.53925
- 1,000 pcs$0.44680
- Te waahanga waahanga:
- SIHB12N60E-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 600V 12A TO263.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Zener - Kotahi, Transistors - JFET, Tauhoko - DIACs, SIDACs, Transistors - Takenga Motuhake, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Diode - Zener - Tuhinga and Diode - Rectifiers - Arrays ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SIHB12N60E-GE3 electronic components. SIHB12N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB12N60E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHB12N60E-GE3 Nga Hua Hua
Te waahanga waahanga :
SIHB12N60E-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CH 600V 12A TO263
Toa :
-
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
600V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
12A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
58nC @ 10V
Vgs (Max) :
±30V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
937pF @ 100V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
147W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
D2PAK
Paepae / Take :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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