Infineon Technologies - IPB35N10S3L26ATMA1

KEY Part #: K6419694

IPB35N10S3L26ATMA1 Utu (USD) [125898Stock Ngahau]

  • 1 pcs$0.29379
  • 1,000 pcs$0.26951

Te waahanga waahanga:
IPB35N10S3L26ATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH TO263-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Te Tauira P taraihi Mana, Transistors - FETs, MOSFETs - Kotahi, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Tauhoko - TRIACs, Diode - Zener - Kotahi, Diode - Kaiwhiwhi - Kotahi, Tauhoko - SCR - Mahi and Transistors - FET, MOSFETs - RF ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB35N10S3L26ATMA1 Nga Hua Hua

Te waahanga waahanga : IPB35N10S3L26ATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH TO263-3
Toa : Automotive, AEC-Q101, OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 100V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 35A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 26.3 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id : 2.4V @ 39µA
Kaari Gate (Qg) (Max) @ Vgs : 39nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2700pF @ 25V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 71W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : D²PAK (TO-263AB)
Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB