Infineon Technologies - IRF5803D2PBF

KEY Part #: K6411863

[13644Stock Ngahau]


    Te waahanga waahanga:
    IRF5803D2PBF
    Kaihanga:
    Infineon Technologies
    Whakaahuatanga Taipitopito:
    MOSFET P-CH 40V 3.4A 8-SOIC.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhou - IGBT - Mahi, Transistors - Bipolar (BJT) - RF, Diode - Rectifiers - Arrays, Tauhoko - TRIACs, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - Bipolar (BJT) - Arrays, Transistors - Takenga Motuhake and Diode - Kaiwhiwhi - Kotahi ...
    Whakapai Tinana:
    We specialize in Infineon Technologies IRF5803D2PBF electronic components. IRF5803D2PBF can be shipped within 24 hours after order. If you have any demands for IRF5803D2PBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRF5803D2PBF Nga Hua Hua

    Te waahanga waahanga : IRF5803D2PBF
    Kaihanga : Infineon Technologies
    Whakaahuatanga : MOSFET P-CH 40V 3.4A 8-SOIC
    Toa : FETKY™
    Wāhanga wahi : Obsolete
    Momo FET : P-Channel
    Hangarau : MOSFET (Metal Oxide)
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 40V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 3.4A (Ta)
    Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 112 mOhm @ 3.4A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Kaari Gate (Qg) (Max) @ Vgs : 37nC @ 10V
    Vgs (Max) : ±20V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1110pF @ 25V
    Āhuahanga FET : Schottky Diode (Isolated)
    Te Whakamau Kaha (Max) : 2W (Ta)
    Taumaha Mahi : -55°C ~ 150°C (TJ)
    Momo Momo : Surface Mount
    Paetukutuku Pūrere Kaiwhakarato : 8-SO
    Paepae / Take : 8-SOIC (0.154", 3.90mm Width)

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