Infineon Technologies - IPB120N03S4L03ATMA1

KEY Part #: K6419596

IPB120N03S4L03ATMA1 Utu (USD) [120440Stock Ngahau]

  • 1 pcs$0.30710
  • 1,000 pcs$0.28172

Te waahanga waahanga:
IPB120N03S4L03ATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH TO263-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kotahi, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - Bipolar (BJT) - Arrays, Tauhoko - SCR - Mahi, Transistors - Whakahoahoa Whakahoahoa, Diode - Rectifiers - Arrays and Taumanako - SCR ...
Whakapai Tinana:
We specialize in Infineon Technologies IPB120N03S4L03ATMA1 electronic components. IPB120N03S4L03ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB120N03S4L03ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB120N03S4L03ATMA1 Nga Hua Hua

Te waahanga waahanga : IPB120N03S4L03ATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH TO263-3
Toa : Automotive, AEC-Q101, OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 120A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 40µA
Kaari Gate (Qg) (Max) @ Vgs : 72nC @ 10V
Vgs (Max) : ±16V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 5300pF @ 25V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 79W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : D²PAK (TO-263AB)
Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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