RN2707JE(TE85L,F) Utu (USD) [1060332Stock Ngahau]
- 1 pcs$0.03488
- Te waahanga waahanga:
- RN2707JE(TE85L,F)
- Kaihanga:
- Toshiba Semiconductor and Storage
- Whakaahuatanga Taipitopito:
- TRANS 2PNP PREBIAS 0.1W ESV.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhoko - SCR - Mahi, Taumanako - SCR, Diode - Nga Kete Aiana, Transistors - Bipolar (BJT) - RF, Tauhoko - TRIACs, Transistors - IGBTs - Kotahi, Transistors - JFET and Diode - RF ...
- Whakapai Tinana:
- We specialize in Toshiba Semiconductor and Storage RN2707JE(TE85L,F) electronic components. RN2707JE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2707JE(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN2707JE(TE85L,F) Nga Hua Hua
Te waahanga waahanga :
RN2707JE(TE85L,F)
Kaihanga :
Toshiba Semiconductor and Storage
Whakaahuatanga :
TRANS 2PNP PREBIAS 0.1W ESV
Toa :
-
Wāhanga wahi :
Active
Momo Whakawhiti :
2 PNP - Pre-Biased (Dual)
Te Oranga - Te Kaikohi (Ic) (Max) :
100mA
Paati - Whakahoki Kaikaha Kohikohi (Max) :
50V
Kaihautū - Papa (R1) :
10 kOhms
Kaikuhiko - Papa Rawhiti (R2) :
47 kOhms
DC Gain o nāianei (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Te Hapati Vce (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
I tenei wa - Kohinga Kohinga (Max) :
100nA (ICBO)
Auau - Te whakawhiti :
200MHz
Te Mana - Max :
100mW
Momo Momo :
Surface Mount
Paepae / Take :
SOT-553
Paetukutuku Pūrere Kaiwhakarato :
ESV
Nga Pūrongo Hou
Kia Korero Ma Te Korero
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