Vishay Siliconix - SI6562DQ-T1-GE3

KEY Part #: K6523509

[4142Stock Ngahau]


    Te waahanga waahanga:
    SI6562DQ-T1-GE3
    Kaihanga:
    Vishay Siliconix
    Whakaahuatanga Taipitopito:
    MOSFET N/P-CH 20V 8-TSSOP.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Nga Kete Aiana, Transistors - Whakahoahoa Whakahoahoa, Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Kotahi, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays and Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana) ...
    Whakapai Tinana:
    We specialize in Vishay Siliconix SI6562DQ-T1-GE3 electronic components. SI6562DQ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI6562DQ-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI6562DQ-T1-GE3 Nga Hua Hua

    Te waahanga waahanga : SI6562DQ-T1-GE3
    Kaihanga : Vishay Siliconix
    Whakaahuatanga : MOSFET N/P-CH 20V 8-TSSOP
    Toa : TrenchFET®
    Wāhanga wahi : Obsolete
    Momo FET : N and P-Channel
    Āhuahanga FET : Logic Level Gate
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 20V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : -
    Rds On (Max) @ Id, Vgs : 30 mOhm @ 4.5A, 4.5V
    Vgs (th) (Max) @ Id : 600mV @ 250µA (Min)
    Kaari Gate (Qg) (Max) @ Vgs : 25nC @ 4.5V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : -
    Te Mana - Max : 1W
    Taumaha Mahi : -55°C ~ 150°C (TJ)
    Momo Momo : Surface Mount
    Paepae / Take : 8-TSSOP (0.173", 4.40mm Width)
    Paetukutuku Pūrere Kaiwhakarato : 8-TSSOP