SI8812DB-T2-E1 Utu (USD) [548287Stock Ngahau]
- 1 pcs$0.06746
- 3,000 pcs$0.06372
- Te waahanga waahanga:
- SI8812DB-T2-E1
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 20V MICROFOOT.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - JFET, Tauhou - IGBT - Mahi, Diode - RF, Diode - Nga Kete Aiana, Taumanako - SCR, Transistors - IGBTs - Kotahi, Transistors - Bipolar (BJT) - Kotahi and Transistors - Bipolar (BJT) - Arrays ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SI8812DB-T2-E1 electronic components. SI8812DB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8812DB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8812DB-T2-E1 Nga Hua Hua
Te waahanga waahanga :
SI8812DB-T2-E1
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CH 20V MICROFOOT
Toa :
TrenchFET®
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
20V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
-
Koraha Motuhake (RW RW On, Min Rds I) :
1.2V, 4.5V
Rds On (Max) @ Id, Vgs :
59 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
17nC @ 8V
Vgs (Max) :
±5V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
-
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
500mW (Ta)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
4-Microfoot
Paepae / Take :
4-UFBGA
Nga Pūrongo Hou
Kia Korero Ma Te Korero
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