Infineon Technologies - BCR191WE6327HTSA1

KEY Part #: K6528120

[4519Stock Ngahau]


    Te waahanga waahanga:
    BCR191WE6327HTSA1
    Kaihanga:
    Infineon Technologies
    Whakaahuatanga Taipitopito:
    TRANS PREBIAS PNP 250MW SOT323-3.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Zener - Tuhinga, Diode - Zener - Kotahi, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Diode - Nga Kete Aiana, Transistors - FET, MOSFETs - RF, Transistors - JFET and Transistors - Bipolar (BJT) - RF ...
    Whakapai Tinana:
    We specialize in Infineon Technologies BCR191WE6327HTSA1 electronic components. BCR191WE6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BCR191WE6327HTSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BCR191WE6327HTSA1 Nga Hua Hua

    Te waahanga waahanga : BCR191WE6327HTSA1
    Kaihanga : Infineon Technologies
    Whakaahuatanga : TRANS PREBIAS PNP 250MW SOT323-3
    Toa : -
    Wāhanga wahi : Obsolete
    Momo Whakawhiti : PNP - Pre-Biased
    Te Oranga - Te Kaikohi (Ic) (Max) : 100mA
    Paati - Whakahoki Kaikaha Kohikohi (Max) : 50V
    Kaihautū - Papa (R1) : 22 kOhms
    Kaikuhiko - Papa Rawhiti (R2) : 22 kOhms
    DC Gain o nāianei (hFE) (Min) @ Ic, Vce : 50 @ 5mA, 5V
    Te Hapati Vce (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
    I tenei wa - Kohinga Kohinga (Max) : 100nA (ICBO)
    Auau - Te whakawhiti : 200MHz
    Te Mana - Max : 250mW
    Momo Momo : Surface Mount
    Paepae / Take : SC-70, SOT-323
    Paetukutuku Pūrere Kaiwhakarato : PG-SOT323-3

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