Infineon Technologies - BSC018NE2LSATMA1

KEY Part #: K6420154

BSC018NE2LSATMA1 Utu (USD) [164965Stock Ngahau]

  • 1 pcs$0.22421
  • 5,000 pcs$0.21525

Te waahanga waahanga:
BSC018NE2LSATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 25V 100A TDSON-8.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhoko - TRIACs, Transistors - FETs, MOSFETs - Kotahi, Transistors - Bipolar (BJT) - Arrays, Te Tauira P taraihi Mana, Transistors - Bipolar (BJT) - Kotahi, Diode - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF and Tauhoko - DIACs, SIDACs ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC018NE2LSATMA1 Nga Hua Hua

Te waahanga waahanga : BSC018NE2LSATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 25V 100A TDSON-8
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 25V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 29A (Ta), 100A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.8 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 39nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2800pF @ 12V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 2.5W (Ta), 69W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-TDSON-8
Paepae / Take : 8-PowerTDFN

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