Vishay Siliconix - SI2312BDS-T1-E3

KEY Part #: K6420457

SI2312BDS-T1-E3 Utu (USD) [529776Stock Ngahau]

  • 1 pcs$0.06982
  • 3,000 pcs$0.06317

Te waahanga waahanga:
SI2312BDS-T1-E3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CH 20V 3.9A SOT23-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Kaiwhiwhi - Kotahi, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - JFET, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - Whakahoahoa Whakahoahoa, Tauhoko - DIACs, SIDACs and Transistors - Bipolar (BJT) - Arrays ...
Whakapai Tinana:
We specialize in Vishay Siliconix SI2312BDS-T1-E3 electronic components. SI2312BDS-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI2312BDS-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI2312BDS-T1-E3 Nga Hua Hua

Te waahanga waahanga : SI2312BDS-T1-E3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CH 20V 3.9A SOT23-3
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 20V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 3.9A (Ta)
Koraha Motuhake (RW RW On, Min Rds I) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 31 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id : 850mV @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 12nC @ 4.5V
Vgs (Max) : ±8V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : -
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 750mW (Ta)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : SOT-23-3 (TO-236)
Paepae / Take : TO-236-3, SC-59, SOT-23-3

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