SIA430DJ-T1-GE3 Utu (USD) [13218Stock Ngahau]
- 3,000 pcs$0.17663
- Te waahanga waahanga:
- SIA430DJ-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 20V 12A SC70-6.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - IGBTs - Kotahi, Transistors - Whakahoahoa Whakahoahoa, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Tauhou - IGBT - Mahi, Transistors - Bipolar (BJT) - RF, Te Tauira P taraihi Mana and Transistors - JFET ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SIA430DJ-T1-GE3 electronic components. SIA430DJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA430DJ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA430DJ-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SIA430DJ-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CH 20V 12A SC70-6
Toa :
TrenchFET®
Wāhanga wahi :
Obsolete
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
20V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
12A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
13.5 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
800pF @ 10V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
3.5W (Ta), 19.2W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
PowerPAK® SC-70-6 Single
Paepae / Take :
PowerPAK® SC-70-6
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