SI4850BDY-T1-GE3 Utu (USD) [201147Stock Ngahau]
- 1 pcs$0.18388
- Te waahanga waahanga:
- SI4850BDY-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 60V SO-8.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Te Tauira P taraihi Mana, Diode - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - RF, Transistors - FETs, MOSFETs - Kotahi, Diode - RF, Tauhoko - TRIACs and Transistors - JFET ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SI4850BDY-T1-GE3 electronic components. SI4850BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4850BDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4850BDY-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SI4850BDY-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CH 60V SO-8
Toa :
TrenchFET® Gen IV
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
60V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
8.4A (Ta), 11.3A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
19.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.8V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
790pF @ 30V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
2.5W (Ta), 4.5W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
8-SO
Paepae / Take :
8-SOIC (0.154", 3.90mm Width)
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