SIHD1K4N60E-GE3 Utu (USD) [70849Stock Ngahau]
- 1 pcs$0.55189
- Te waahanga waahanga:
- SIHD1K4N60E-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CH DPAK TO-252.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - IGBTs - Kotahi, Diode - Kaiwhiwhi - Kotahi, Diode - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Diode - Nga Kete Aiana, Transistors - FET, MOSFETs - RF and Transistors - JFET ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SIHD1K4N60E-GE3 electronic components. SIHD1K4N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHD1K4N60E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHD1K4N60E-GE3 Nga Hua Hua
Te waahanga waahanga :
SIHD1K4N60E-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CH DPAK TO-252
Toa :
E
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
600V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
4.2A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
10V
Rds On (Max) @ Id, Vgs :
1.45 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
7.5nC @ 10V
Vgs (Max) :
±30V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
172pF @ 100V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
63W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
TO-252AA
Paepae / Take :
TO-252-3, DPak (2 Leads + Tab), SC-63
Nga Pūrongo Hou
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