Toshiba Semiconductor and Storage - 2SA965-Y,F(J

KEY Part #: K6381900

[9842Stock Ngahau]


    Te waahanga waahanga:
    2SA965-Y,F(J
    Kaihanga:
    Toshiba Semiconductor and Storage
    Whakaahuatanga Taipitopito:
    TRANS PNP 800MA 120V TO226-3.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhoko - SCR - Mahi, Diode - RF, Diode - Rectifiers - Arrays, Tauhou - IGBT - Mahi, Transistors - IGBTs - Kotahi, Diode - Zener - Kotahi, Transistors - Whakahoahoa Whakahoahoa and Diode - Kaiwhiwhi - Kotahi ...
    Whakapai Tinana:
    We specialize in Toshiba Semiconductor and Storage 2SA965-Y,F(J electronic components. 2SA965-Y,F(J can be shipped within 24 hours after order. If you have any demands for 2SA965-Y,F(J, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    2SA965-Y,F(J Nga Hua Hua

    Te waahanga waahanga : 2SA965-Y,F(J
    Kaihanga : Toshiba Semiconductor and Storage
    Whakaahuatanga : TRANS PNP 800MA 120V TO226-3
    Toa : -
    Wāhanga wahi : Obsolete
    Momo Whakawhiti : PNP
    Te Oranga - Te Kaikohi (Ic) (Max) : 800mA
    Paati - Whakahoki Kaikaha Kohikohi (Max) : 120V
    Te Hapati Vce (Max) @ Ib, Ic : 1V @ 50mA, 500mA
    I tenei wa - Kohinga Kohinga (Max) : 100nA (ICBO)
    DC Gain o nāianei (hFE) (Min) @ Ic, Vce : 80 @ 100mA, 5V
    Te Mana - Max : 900mW
    Auau - Te whakawhiti : 120MHz
    Taumaha Mahi : 150°C (TJ)
    Momo Momo : Through Hole
    Paepae / Take : TO-226-3, TO-92-3 Long Body
    Paetukutuku Pūrere Kaiwhakarato : LSTM

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