SI7852DP-T1-E3 Utu (USD) [88646Stock Ngahau]
- 1 pcs$0.44109
- 3,000 pcs$0.37191
- Te waahanga waahanga:
- SI7852DP-T1-E3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 80V 7.6A PPAK SO-8.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Rectifiers - Arrays, Tauhoko - TRIACs, Diode - Nga Kete Aiana, Transistors - IGBTs - Kotahi, Transistors - IGBTs - Arrays, Tauhoko - DIACs, SIDACs, Transistors - Bipolar (BJT) - Kotahi and Diode - Zener - Kotahi ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SI7852DP-T1-E3 electronic components. SI7852DP-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7852DP-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7852DP-T1-E3 Nga Hua Hua
Te waahanga waahanga :
SI7852DP-T1-E3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CH 80V 7.6A PPAK SO-8
Toa :
TrenchFET®
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
80V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
7.6A (Ta)
Koraha Motuhake (RW RW On, Min Rds I) :
6V, 10V
Rds On (Max) @ Id, Vgs :
16.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA (Min)
Kaari Gate (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
-
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
1.9W (Ta)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
PowerPAK® SO-8
Paepae / Take :
PowerPAK® SO-8
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