[2056Stock Ngahau]
- Te waahanga waahanga:
- RN2961FE(TE85L,F)
- Kaihanga:
- Toshiba Semiconductor and Storage
- Whakaahuatanga Taipitopito:
- TRANS 2PNP PREBIAS 0.1W ES6.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Nga Kete Aiana, Transistors - IGBTs - Kotahi, Tauhoko - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - Takenga Motuhake, Diode - Rectifiers - Arrays and Taumanako - SCR ...
- Whakapai Tinana:
- We specialize in Toshiba Semiconductor and Storage RN2961FE(TE85L,F) electronic components. RN2961FE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2961FE(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN2961FE(TE85L,F) Nga Hua Hua
Te waahanga waahanga :
RN2961FE(TE85L,F)
Kaihanga :
Toshiba Semiconductor and Storage
Whakaahuatanga :
TRANS 2PNP PREBIAS 0.1W ES6
Toa :
-
Wāhanga wahi :
Obsolete
Momo Whakawhiti :
2 PNP - Pre-Biased (Dual)
Te Oranga - Te Kaikohi (Ic) (Max) :
100mA
Paati - Whakahoki Kaikaha Kohikohi (Max) :
50V
Kaihautū - Papa (R1) :
4.7 kOhms
Kaikuhiko - Papa Rawhiti (R2) :
4.7 kOhms
DC Gain o nāianei (hFE) (Min) @ Ic, Vce :
30 @ 10mA, 5V
Te Hapati Vce (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
I tenei wa - Kohinga Kohinga (Max) :
100nA (ICBO)
Auau - Te whakawhiti :
200MHz
Te Mana - Max :
100mW
Momo Momo :
Surface Mount
Paepae / Take :
SOT-563, SOT-666
Paetukutuku Pūrere Kaiwhakarato :
ES6
Nga Pūrongo Hou
Kia Korero Ma Te Korero
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