Vishay Siliconix - SI2371EDS-T1-GE3

KEY Part #: K6404978

SI2371EDS-T1-GE3 Utu (USD) [899243Stock Ngahau]

  • 1 pcs$0.04113
  • 3,000 pcs$0.03915

Te waahanga waahanga:
SI2371EDS-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET P-CH 30V 4.8A SOT-23.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - RF, Tauhou - IGBT - Mahi, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - Takenga Motuhake, Transistors - JFET, Diode - RF, Te Tauira P taraihi Mana and Transistors - IGBTs - Arrays ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI2371EDS-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SI2371EDS-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET P-CH 30V 4.8A SOT-23
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 4.8A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 2.5V, 10V
Rds On (Max) @ Id, Vgs : 45 mOhm @ 3.7A, 10V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±12V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : -
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 1W (Ta), 1.7W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : SOT-23
Paepae / Take : TO-236-3, SC-59, SOT-23-3