Vishay Siliconix - SQ2337ES-T1_GE3

KEY Part #: K6416609

SQ2337ES-T1_GE3 Utu (USD) [344842Stock Ngahau]

  • 1 pcs$0.10726
  • 3,000 pcs$0.09710

Te waahanga waahanga:
SQ2337ES-T1_GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET P-CHAN 80V SOT23.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - IGBTs - Arrays, Diode - Kaiwhiwhi - Kotahi, Transistors - JFET, Diode - Zener - Tuhinga, Tauhoko - SCR - Mahi, Transistors - FETs, MOSFETs - Arrays, Te Tauira P taraihi Mana and Transistors - FET, MOSFETs - RF ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQ2337ES-T1_GE3 Nga Hua Hua

Te waahanga waahanga : SQ2337ES-T1_GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET P-CHAN 80V SOT23
Toa : Automotive, AEC-Q101, TrenchFET®
Wāhanga wahi : Active
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 80V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 2.2A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 6V, 10V
Rds On (Max) @ Id, Vgs : 290 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 18nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 620pF @ 30V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 3W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : SOT-23-3 (TO-236)
Paepae / Take : TO-236-3, SC-59, SOT-23-3

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