Vishay Siliconix - SI7102DN-T1-GE3

KEY Part #: K6401325

SI7102DN-T1-GE3 Utu (USD) [3089Stock Ngahau]

  • 3,000 pcs$0.37874

Te waahanga waahanga:
SI7102DN-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CH 12V 35A 1212-8.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - IGBTs - Arrays, Transistors - JFET, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Tauhoko - DIACs, SIDACs, Diode - Kaiwhiwhi - Kotahi, Transistors - IGBTs - Kotahi, Diode - Nga Kete Aiana and Taumanako - SCR ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7102DN-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SI7102DN-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CH 12V 35A 1212-8
Toa : TrenchFET®
Wāhanga wahi : Obsolete
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 12V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 35A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 3.8 mOhm @ 15A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 110nC @ 8V
Vgs (Max) : ±8V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 3720pF @ 6V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 3.8W (Ta), 52W (Tc)
Taumaha Mahi : -50°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® 1212-8
Paepae / Take : PowerPAK® 1212-8