Toshiba Semiconductor and Storage - RN2102ACT(TPL3)

KEY Part #: K6527832

[2700Stock Ngahau]


    Te waahanga waahanga:
    RN2102ACT(TPL3)
    Kaihanga:
    Toshiba Semiconductor and Storage
    Whakaahuatanga Taipitopito:
    TRANS PREBIAS PNP 0.1W CST3.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Diode - RF, Transistors - IGBTs - Arrays, Tauhoko - SCR - Mahi, Te Tauira P taraihi Mana, Diode - Rectifiers - Arrays and Transistors - Bipolar (BJT) - Arrays ...
    Whakapai Tinana:
    We specialize in Toshiba Semiconductor and Storage RN2102ACT(TPL3) electronic components. RN2102ACT(TPL3) can be shipped within 24 hours after order. If you have any demands for RN2102ACT(TPL3), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RN2102ACT(TPL3) Nga Hua Hua

    Te waahanga waahanga : RN2102ACT(TPL3)
    Kaihanga : Toshiba Semiconductor and Storage
    Whakaahuatanga : TRANS PREBIAS PNP 0.1W CST3
    Toa : -
    Wāhanga wahi : Active
    Momo Whakawhiti : PNP - Pre-Biased
    Te Oranga - Te Kaikohi (Ic) (Max) : 80mA
    Paati - Whakahoki Kaikaha Kohikohi (Max) : 50V
    Kaihautū - Papa (R1) : 10 kOhms
    Kaikuhiko - Papa Rawhiti (R2) : 10 kOhms
    DC Gain o nāianei (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
    Te Hapati Vce (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
    I tenei wa - Kohinga Kohinga (Max) : 500nA
    Auau - Te whakawhiti : -
    Te Mana - Max : 100mW
    Momo Momo : Surface Mount
    Paepae / Take : SC-101, SOT-883
    Paetukutuku Pūrere Kaiwhakarato : CST3

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