Toshiba Semiconductor and Storage - RN2306,LF

KEY Part #: K6526310

RN2306,LF Utu (USD) [2686624Stock Ngahau]

  • 1 pcs$0.01384
  • 3,000 pcs$0.01377

Te waahanga waahanga:
RN2306,LF
Kaihanga:
Toshiba Semiconductor and Storage
Whakaahuatanga Taipitopito:
TRANS PREBIAS PNP 0.1W USM.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - FET, MOSFETs - RF, Tauhoko - DIACs, SIDACs, Transistors - JFET, Transistors - IGBTs - Kotahi, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Diode - Zener - Tuhinga and Transistors - IGBTs - Arrays ...
Whakapai Tinana:
We specialize in Toshiba Semiconductor and Storage RN2306,LF electronic components. RN2306,LF can be shipped within 24 hours after order. If you have any demands for RN2306,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN2306,LF Nga Hua Hua

Te waahanga waahanga : RN2306,LF
Kaihanga : Toshiba Semiconductor and Storage
Whakaahuatanga : TRANS PREBIAS PNP 0.1W USM
Toa : -
Wāhanga wahi : Active
Momo Whakawhiti : PNP - Pre-Biased
Te Oranga - Te Kaikohi (Ic) (Max) : 100mA
Paati - Whakahoki Kaikaha Kohikohi (Max) : 50V
Kaihautū - Papa (R1) : 4.7 kOhms
Kaikuhiko - Papa Rawhiti (R2) : 47 kOhms
DC Gain o nāianei (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Te Hapati Vce (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
I tenei wa - Kohinga Kohinga (Max) : 500nA
Auau - Te whakawhiti : 200MHz
Te Mana - Max : 100mW
Momo Momo : Surface Mount
Paepae / Take : SC-70, SOT-323
Paetukutuku Pūrere Kaiwhakarato : USM

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