Infineon Technologies - IPI80N08S406AKSA1

KEY Part #: K6418379

IPI80N08S406AKSA1 Utu (USD) [61102Stock Ngahau]

  • 1 pcs$0.63993
  • 500 pcs$0.58697

Te waahanga waahanga:
IPI80N08S406AKSA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH TO262-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Taumanako - SCR, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Tauhoko - SCR - Mahi, Transistors - FETs, MOSFETs - Kotahi, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF and Transistors - FETs, MOSFETs - Arrays ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI80N08S406AKSA1 Nga Hua Hua

Te waahanga waahanga : IPI80N08S406AKSA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH TO262-3
Toa : Automotive, AEC-Q101, OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 80V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 80A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 5.8 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 4V @ 90µA
Kaari Gate (Qg) (Max) @ Vgs : 70nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 4800pF @ 25V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 150W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Through Hole
Paetukutuku Pūrere Kaiwhakarato : PG-TO262-3-1
Paepae / Take : TO-262-3 Long Leads, I²Pak, TO-262AA

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