Toshiba Semiconductor and Storage - TPN2010FNH,L1Q

KEY Part #: K6419951

TPN2010FNH,L1Q Utu (USD) [146815Stock Ngahau]

  • 1 pcs$0.26459
  • 5,000 pcs$0.26327

Te waahanga waahanga:
TPN2010FNH,L1Q
Kaihanga:
Toshiba Semiconductor and Storage
Whakaahuatanga Taipitopito:
MOSFET N-CH 250V 5.6A 8TSON.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhoko - TRIACs, Transistors - IGBTs - Kotahi, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Tauhou - IGBT - Mahi, Tauhoko - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Arrays, I mua-Biased ...
Whakapai Tinana:
We specialize in Toshiba Semiconductor and Storage TPN2010FNH,L1Q electronic components. TPN2010FNH,L1Q can be shipped within 24 hours after order. If you have any demands for TPN2010FNH,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPN2010FNH,L1Q Nga Hua Hua

Te waahanga waahanga : TPN2010FNH,L1Q
Kaihanga : Toshiba Semiconductor and Storage
Whakaahuatanga : MOSFET N-CH 250V 5.6A 8TSON
Toa : U-MOSVIII-H
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 250V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 5.6A (Ta)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 198 mOhm @ 2.8A, 10V
Vgs (th) (Max) @ Id : 4V @ 200µA
Kaari Gate (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 600pF @ 100V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 700mW (Ta), 39W (Tc)
Taumaha Mahi : 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : 8-TSON Advance (3.3x3.3)
Paepae / Take : 8-PowerVDFN

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