Infineon Technologies - IPI530N15N3GXKSA1

KEY Part #: K6419123

IPI530N15N3GXKSA1 Utu (USD) [92680Stock Ngahau]

  • 1 pcs$0.42189
  • 500 pcs$0.38702

Te waahanga waahanga:
IPI530N15N3GXKSA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 150V 21A TO262-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Nga Kete Aiana, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Tauhou - IGBT - Mahi, Transistors - FET, MOSFETs - RF, Diode - Zener - Kotahi, Diode - RF and Transistors - FETs, MOSFETs - Kotahi ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI530N15N3GXKSA1 Nga Hua Hua

Te waahanga waahanga : IPI530N15N3GXKSA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 150V 21A TO262-3
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 150V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 21A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 8V, 10V
Rds On (Max) @ Id, Vgs : 53 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id : 4V @ 35µA
Kaari Gate (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 887pF @ 75V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 68W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Through Hole
Paetukutuku Pūrere Kaiwhakarato : PG-TO262-3
Paepae / Take : TO-262-3 Long Leads, I²Pak, TO-262AA