SI3900DV-T1-GE3 Utu (USD) [203660Stock Ngahau]
- 1 pcs$0.18161
- 3,000 pcs$0.17054
- Te waahanga waahanga:
- SI3900DV-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET 2N-CH 20V 2A 6-TSOP.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Kotahi, Diode - Zener - Tuhinga, Tauhou - IGBT - Mahi, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Diode - Nga Kete Aiana, Transistors - Takenga Motuhake, Transistors - Bipolar (BJT) - RF and Diode - Zener - Kotahi ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SI3900DV-T1-GE3 electronic components. SI3900DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3900DV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3900DV-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SI3900DV-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET 2N-CH 20V 2A 6-TSOP
Toa :
TrenchFET®
Wāhanga wahi :
Active
Momo FET :
2 N-Channel (Dual)
Āhuahanga FET :
Logic Level Gate
Whakahinuhinu ki te Rauemi Waiata (Vds) :
20V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
2A
Rds On (Max) @ Id, Vgs :
125 mOhm @ 2.4A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
4nC @ 4.5V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
-
Te Mana - Max :
830mW
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paepae / Take :
SOT-23-6 Thin, TSOT-23-6
Paetukutuku Pūrere Kaiwhakarato :
6-TSOP
Nga Pūrongo Hou
Kia Korero Ma Te Korero
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