Vishay Siliconix - SQJB90EP-T1_GE3

KEY Part #: K6525257

SQJB90EP-T1_GE3 Utu (USD) [152759Stock Ngahau]

  • 1 pcs$0.24213
  • 3,000 pcs$0.20465

Te waahanga waahanga:
SQJB90EP-T1_GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET 2 N-CH 80V POWERPAK SO8.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Zener - Kotahi, Transistors - IGBTs - Kotahi, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Diode - RF, Transistors - Bipolar (BJT) - Arrays, Taumanako - SCR, Transistors - Whakahoahoa Whakahoahoa and Diode - Kaiwhiwhi - Kotahi ...
Whakapai Tinana:
We specialize in Vishay Siliconix SQJB90EP-T1_GE3 electronic components. SQJB90EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJB90EP-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJB90EP-T1_GE3 Nga Hua Hua

Te waahanga waahanga : SQJB90EP-T1_GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET 2 N-CH 80V POWERPAK SO8
Toa : Automotive, AEC-Q101, TrenchFET®
Wāhanga wahi : Active
Momo FET : 2 N-Channel (Dual)
Āhuahanga FET : Standard
Whakahinuhinu ki te Rauemi Waiata (Vds) : 80V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 30A (Tc)
Rds On (Max) @ Id, Vgs : 21.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 25nC @ 10V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1200pF @ 25V
Te Mana - Max : 48W
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paepae / Take : PowerPAK® SO-8 Dual
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® SO-8 Dual