Infineon Technologies - FF100R12RT4HOSA1

KEY Part #: K6532652

FF100R12RT4HOSA1 Utu (USD) [1783Stock Ngahau]

  • 1 pcs$24.27738

Te waahanga waahanga:
FF100R12RT4HOSA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
IGBT MODULE VCES 1700V 1000A.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Taumanako - SCR, Diode - RF, Tauhoko - DIACs, SIDACs, Te Tauira P taraihi Mana, Transistors - IGBTs - Arrays, Diode - Kaiwhiwhi - Kotahi, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - Kotahi ...
Whakapai Tinana:
We specialize in Infineon Technologies FF100R12RT4HOSA1 electronic components. FF100R12RT4HOSA1 can be shipped within 24 hours after order. If you have any demands for FF100R12RT4HOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FF100R12RT4HOSA1 Nga Hua Hua

Te waahanga waahanga : FF100R12RT4HOSA1
Kaihanga : Infineon Technologies
Whakaahuatanga : IGBT MODULE VCES 1700V 1000A
Toa : -
Wāhanga wahi : Active
Momo IGBT : Trench Field Stop
Hōutuutu : 2 Independent
Paati - Whakahoki Kaikaha Kohikohi (Max) : 1200V
Te Oranga - Te Kaikohi (Ic) (Max) : 100A
Te Mana - Max : 555W
Vce (on) (Max) @ Vge, Ic : 2.15V @ 15V, 100A
I tenei wa - Kohinga Kohinga (Max) : 1mA
Te Mahinga Whakauru (Kati) @ Vce : 630nF @ 25V
Whakautu : Standard
NTC Thermistor : No
Taumaha Mahi : -40°C ~ 150°C
Momo Momo : Chassis Mount
Paepae / Take : Module
Paetukutuku Pūrere Kaiwhakarato : Module

Kia Korero Ma Te Korero
  • VS-ETF150Y65N

    Vishay Semiconductor Diodes Division

    IGBT 650V 150A EMIPAK-2B.

  • CPV363M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6A IMS-2.

  • CPV362M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 31 IMS-2.

  • CPV362M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 3.9A IMS-2.

  • CPV363M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6.8A IMS-2.

  • A2C25S12M3-F

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.