NXP USA Inc. - BYC8B-600PQP

KEY Part #: K6445705

[2016Stock Ngahau]


    Te waahanga waahanga:
    BYC8B-600PQP
    Kaihanga:
    NXP USA Inc.
    Whakaahuatanga Taipitopito:
    DIODE GEN PURP 600V 8A.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - FETs, MOSFETs - Kotahi, Transistors - Takenga Motuhake, Transistors - Whakahoahoa Whakahoahoa, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Diode - Nga Kete Aiana, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolar (BJT) - Arrays ...
    Whakapai Tinana:
    We specialize in NXP USA Inc. BYC8B-600PQP electronic components. BYC8B-600PQP can be shipped within 24 hours after order. If you have any demands for BYC8B-600PQP, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BYC8B-600PQP Nga Hua Hua

    Te waahanga waahanga : BYC8B-600PQP
    Kaihanga : NXP USA Inc.
    Whakaahuatanga : DIODE GEN PURP 600V 8A
    Toa : -
    Wāhanga wahi : Active
    Momo Diode : Standard
    Huringa - DC Revers (Vr) (Max) : 600V
    Koinei - He Whakatau I Whakatauhia (Io) : 8A
    Tauira - Whakamua (Vf) (Max) @ If : 3.4V @ 8A
    Tere : Fast Recovery =< 500ns, > 200mA (Io)
    Te Whakahoutanga Whakaora (trr) : 18ns
    Ko tenei - Te Hurorirori Reihi @ Ngar : 20µA @ 600V
    Te Aukati @ Vr, F : -
    Momo Momo : Surface Mount
    Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Paetukutuku Pūrere Kaiwhakarato : D2PAK
    Taumaha Mahi - Kawenga : 175°C (Max)

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