Toshiba Semiconductor and Storage - GT10J312(Q)

KEY Part #: K6424069

[9435Stock Ngahau]


    Te waahanga waahanga:
    GT10J312(Q)
    Kaihanga:
    Toshiba Semiconductor and Storage
    Whakaahuatanga Taipitopito:
    IGBT 600V 10A 60W TO220SM.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Diode - Zener - Tuhinga, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Taumanako - SCR, Transistors - Takenga Motuhake, Transistors - Whakahoahoa Whakahoahoa and Te Tauira P taraihi Mana ...
    Whakapai Tinana:
    We specialize in Toshiba Semiconductor and Storage GT10J312(Q) electronic components. GT10J312(Q) can be shipped within 24 hours after order. If you have any demands for GT10J312(Q), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    GT10J312(Q) Nga Hua Hua

    Te waahanga waahanga : GT10J312(Q)
    Kaihanga : Toshiba Semiconductor and Storage
    Whakaahuatanga : IGBT 600V 10A 60W TO220SM
    Toa : -
    Wāhanga wahi : Obsolete
    Momo IGBT : -
    Paati - Whakahoki Kaikaha Kohikohi (Max) : 600V
    Te Oranga - Te Kaikohi (Ic) (Max) : 10A
    Ko te Ake - he Kohinga Kohinga (Icm) : 20A
    Vce (on) (Max) @ Vge, Ic : 2.7V @ 15V, 10A
    Te Mana - Max : 60W
    Te Whakapono Kaha : -
    Momo Inputomo : Standard
    Kaari Gate : -
    Td (on / off) @ 25 ° C : 400ns/400ns
    Te Ainga Whakamatau : 300V, 10A, 100 Ohm, 15V
    Te Whakahoutanga Whakaora (trr) : 200ns
    Taumaha Mahi : 150°C (TJ)
    Momo Momo : Surface Mount
    Paepae / Take : TO-252-3, DPak (2 Leads + Tab), SC-63
    Paetukutuku Pūrere Kaiwhakarato : TO-220SM