Vishay Siliconix - SI4288DY-T1-GE3

KEY Part #: K6523229

SI4288DY-T1-GE3 Utu (USD) [142562Stock Ngahau]

  • 1 pcs$0.25945
  • 2,500 pcs$0.24363

Te waahanga waahanga:
SI4288DY-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET 2N-CH 40V 9.2A 8SO.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Whakahoahoa Whakahoahoa, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Kotahi, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Diode - Kaiwhiwhi - Kotahi, Transistors - FETs, MOSFETs - Arrays and Transistors - FET, MOSFETs - RF ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4288DY-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SI4288DY-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET 2N-CH 40V 9.2A 8SO
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : 2 N-Channel (Dual)
Āhuahanga FET : Logic Level Gate
Whakahinuhinu ki te Rauemi Waiata (Vds) : 40V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 9.2A
Rds On (Max) @ Id, Vgs : 20 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 15nC @ 10V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 580pF @ 20V
Te Mana - Max : 3.1W
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paepae / Take : 8-SOIC (0.154", 3.90mm Width)
Paetukutuku Pūrere Kaiwhakarato : 8-SO