Vishay Siliconix - SI4124DY-T1-GE3

KEY Part #: K6419026

SI4124DY-T1-GE3 Utu (USD) [88065Stock Ngahau]

  • 1 pcs$0.44400
  • 2,500 pcs$0.41599

Te waahanga waahanga:
SI4124DY-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CH 40V 20.5A 8-SOIC.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - FETs, MOSFETs - Arrays, Diode - Rectifiers - Arrays, Tauhoko - TRIACs, Transistors - IGBTs - Arrays, Tauhou - IGBT - Mahi, Taumanako - SCR, Transistors - Whakahoahoa Whakahoahoa and Transistors - Bipolar (BJT) - Arrays, I mua-Biased ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4124DY-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SI4124DY-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CH 40V 20.5A 8-SOIC
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 40V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 20.5A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 7.5 mOhm @ 14A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 77nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 3540pF @ 20V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 2.5W (Ta), 5.7W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : 8-SO
Paepae / Take : 8-SOIC (0.154", 3.90mm Width)