NXP USA Inc. - PDTD123ES,126

KEY Part #: K6527756

[2726Stock Ngahau]


    Te waahanga waahanga:
    PDTD123ES,126
    Kaihanga:
    NXP USA Inc.
    Whakaahuatanga Taipitopito:
    TRANS PREBIAS NPN 500MW TO92-3.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Whakahoahoa Whakahoahoa, Transistors - FET, MOSFETs - RF, Tauhoko - DIACs, SIDACs, Diode - Zener - Kotahi, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Tauhou - IGBT - Mahi, Transistors - JFET and Tauhoko - TRIACs ...
    Whakapai Tinana:
    We specialize in NXP USA Inc. PDTD123ES,126 electronic components. PDTD123ES,126 can be shipped within 24 hours after order. If you have any demands for PDTD123ES,126, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PDTD123ES,126 Nga Hua Hua

    Te waahanga waahanga : PDTD123ES,126
    Kaihanga : NXP USA Inc.
    Whakaahuatanga : TRANS PREBIAS NPN 500MW TO92-3
    Toa : -
    Wāhanga wahi : Obsolete
    Momo Whakawhiti : NPN - Pre-Biased
    Te Oranga - Te Kaikohi (Ic) (Max) : 500mA
    Paati - Whakahoki Kaikaha Kohikohi (Max) : 50V
    Kaihautū - Papa (R1) : 2.2 kOhms
    Kaikuhiko - Papa Rawhiti (R2) : 2.2 kOhms
    DC Gain o nāianei (hFE) (Min) @ Ic, Vce : 40 @ 50mA, 5V
    Te Hapati Vce (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
    I tenei wa - Kohinga Kohinga (Max) : 500nA
    Auau - Te whakawhiti : -
    Te Mana - Max : 500mW
    Momo Momo : Through Hole
    Paepae / Take : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Paetukutuku Pūrere Kaiwhakarato : TO-92-3