Vishay Siliconix - SIR112DP-T1-RE3

KEY Part #: K6419906

SIR112DP-T1-RE3 Utu (USD) [143171Stock Ngahau]

  • 1 pcs$0.25834

Te waahanga waahanga:
SIR112DP-T1-RE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CHAN 40V.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Taumanako - SCR, Transistors - Whakahoahoa Whakahoahoa, Transistors - IGBTs - Kotahi, Diode - Nga Kete Aiana, Transistors - Bipolar (BJT) - Kotahi, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhoko - DIACs, SIDACs and Diode - Zener - Tuhinga ...
Whakapai Tinana:
We specialize in Vishay Siliconix SIR112DP-T1-RE3 electronic components. SIR112DP-T1-RE3 can be shipped within 24 hours after order. If you have any demands for SIR112DP-T1-RE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIR112DP-T1-RE3 Nga Hua Hua

Te waahanga waahanga : SIR112DP-T1-RE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CHAN 40V
Toa : TrenchFET® Gen IV
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 40V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 37.6A (Ta), 133A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.96 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.4V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 89nC @ 10V
Vgs (Max) : +20V, -16V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 4270pF @ 20V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 5W (Ta), 62.5W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® SO-8
Paepae / Take : PowerPAK® SO-8

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