Vishay Siliconix - SI2311DS-T1-E3

KEY Part #: K6406188

[1405Stock Ngahau]


    Te waahanga waahanga:
    SI2311DS-T1-E3
    Kaihanga:
    Vishay Siliconix
    Whakaahuatanga Taipitopito:
    MOSFET P-CH 8V 3A SOT23.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - FETs, MOSFETs - Kotahi, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhoko - SCR - Mahi, Transistors - Bipolar (BJT) - RF, Diode - Zener - Tuhinga, Tauhoko - TRIACs and Tauhou - IGBT - Mahi ...
    Whakapai Tinana:
    We specialize in Vishay Siliconix SI2311DS-T1-E3 electronic components. SI2311DS-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI2311DS-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI2311DS-T1-E3 Nga Hua Hua

    Te waahanga waahanga : SI2311DS-T1-E3
    Kaihanga : Vishay Siliconix
    Whakaahuatanga : MOSFET P-CH 8V 3A SOT23
    Toa : TrenchFET®
    Wāhanga wahi : Obsolete
    Momo FET : P-Channel
    Hangarau : MOSFET (Metal Oxide)
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 8V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 3A (Ta)
    Koraha Motuhake (RW RW On, Min Rds I) : 1.8V, 4.5V
    Rds On (Max) @ Id, Vgs : 45 mOhm @ 3.5A, 4.5V
    Vgs (th) (Max) @ Id : 800mV @ 250µA
    Kaari Gate (Qg) (Max) @ Vgs : 12nC @ 4.5V
    Vgs (Max) : ±8V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 970pF @ 4V
    Āhuahanga FET : -
    Te Whakamau Kaha (Max) : 710mW (Ta)
    Taumaha Mahi : -55°C ~ 150°C (TJ)
    Momo Momo : Surface Mount
    Paetukutuku Pūrere Kaiwhakarato : SOT-23-3
    Paepae / Take : TO-236-3, SC-59, SOT-23-3

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