Global Power Technologies Group - GP1M009A090N

KEY Part #: K6402615

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    Te waahanga waahanga:
    GP1M009A090N
    Kaihanga:
    Global Power Technologies Group
    Whakaahuatanga Taipitopito:
    MOSFET N-CH 900V 9.5A TO3PN.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhoko - TRIACs, Diode - Zener - Tuhinga, Tauhoko - SCR - Mahi, Transistors - IGBTs - Kotahi, Transistors - JFET, Diode - Nga Kete Aiana, Diode - Zener - Kotahi and Transistors - Bipolar (BJT) - Kotahi, I mua i te m ...
    Whakapai Tinana:
    We specialize in Global Power Technologies Group GP1M009A090N electronic components. GP1M009A090N can be shipped within 24 hours after order. If you have any demands for GP1M009A090N, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    GP1M009A090N Nga Hua Hua

    Te waahanga waahanga : GP1M009A090N
    Kaihanga : Global Power Technologies Group
    Whakaahuatanga : MOSFET N-CH 900V 9.5A TO3PN
    Toa : -
    Wāhanga wahi : Obsolete
    Momo FET : N-Channel
    Hangarau : MOSFET (Metal Oxide)
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 900V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 9.5A (Tc)
    Koraha Motuhake (RW RW On, Min Rds I) : 10V
    Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 4.75A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Kaari Gate (Qg) (Max) @ Vgs : 65nC @ 10V
    Vgs (Max) : ±30V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2324pF @ 25V
    Āhuahanga FET : -
    Te Whakamau Kaha (Max) : 312W (Tc)
    Taumaha Mahi : -55°C ~ 150°C (TJ)
    Momo Momo : Through Hole
    Paetukutuku Pūrere Kaiwhakarato : TO-3PN
    Paepae / Take : TO-3P-3, SC-65-3

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