Infineon Technologies - IPI80P03P4L04AKSA1

KEY Part #: K6406649

IPI80P03P4L04AKSA1 Utu (USD) [1246Stock Ngahau]

  • 500 pcs$0.51663

Te waahanga waahanga:
IPI80P03P4L04AKSA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET P-CH 30V 80A TO262-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kotahi, Tauhoko - SCR - Mahi, Tauhoko - DIACs, SIDACs, Transistors - IGBTs - Kotahi, Diode - Nga Kete Aiana, Diode - Kaiwhiwhi - Kotahi and Te Tauira P taraihi Mana ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI80P03P4L04AKSA1 Nga Hua Hua

Te waahanga waahanga : IPI80P03P4L04AKSA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET P-CH 30V 80A TO262-3
Toa : OptiMOS™
Wāhanga wahi : Obsolete
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 80A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 2V @ 253µA
Kaari Gate (Qg) (Max) @ Vgs : 160nC @ 10V
Vgs (Max) : +5V, -16V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 11300pF @ 25V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 137W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Through Hole
Paetukutuku Pūrere Kaiwhakarato : PG-TO262-3
Paepae / Take : TO-262-3 Long Leads, I²Pak, TO-262AA

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