NXP USA Inc. - PMDPB38UNE,115

KEY Part #: K6523773

[4054Stock Ngahau]


    Te waahanga waahanga:
    PMDPB38UNE,115
    Kaihanga:
    NXP USA Inc.
    Whakaahuatanga Taipitopito:
    MOSFET 2N-CH 20V 4A HUSON6.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Diode - Zener - Kotahi, Diode - RF, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - Bipolar (BJT) - Kotahi, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - IGBTs - Arrays and Diode - Rectifiers - Arrays ...
    Whakapai Tinana:
    We specialize in NXP USA Inc. PMDPB38UNE,115 electronic components. PMDPB38UNE,115 can be shipped within 24 hours after order. If you have any demands for PMDPB38UNE,115, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PMDPB38UNE,115 Nga Hua Hua

    Te waahanga waahanga : PMDPB38UNE,115
    Kaihanga : NXP USA Inc.
    Whakaahuatanga : MOSFET 2N-CH 20V 4A HUSON6
    Toa : -
    Wāhanga wahi : Obsolete
    Momo FET : 2 N-Channel (Dual)
    Āhuahanga FET : Logic Level Gate
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 20V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 4A
    Rds On (Max) @ Id, Vgs : 46 mOhm @ 3A, 4.5V
    Vgs (th) (Max) @ Id : 1V @ 250µA
    Kaari Gate (Qg) (Max) @ Vgs : 4.4nC @ 4.5V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 268pF @ 10V
    Te Mana - Max : 510mW
    Taumaha Mahi : -55°C ~ 150°C (TJ)
    Momo Momo : Surface Mount
    Paepae / Take : 6-UDFN Exposed Pad
    Paetukutuku Pūrere Kaiwhakarato : DFN2020-6