Vishay Siliconix - SQJ411EP-T1_GE3

KEY Part #: K6419967

SQJ411EP-T1_GE3 Utu (USD) [147465Stock Ngahau]

  • 1 pcs$0.25082
  • 3,000 pcs$0.21196

Te waahanga waahanga:
SQJ411EP-T1_GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET P-CH 12V 60A POWERPAKSO-8.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - IGBTs - Kotahi, Transistors - Bipolar (BJT) - RF, Diode - Kaiwhiwhi - Kotahi, Transistors - FET, MOSFETs - RF, Te Tauira P taraihi Mana, Tauhoko - SCR - Mahi and Transistors - Whakahoahoa Whakahoahoa ...
Whakapai Tinana:
We specialize in Vishay Siliconix SQJ411EP-T1_GE3 electronic components. SQJ411EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ411EP-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJ411EP-T1_GE3 Nga Hua Hua

Te waahanga waahanga : SQJ411EP-T1_GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET P-CH 12V 60A POWERPAKSO-8
Toa : Automotive, AEC-Q101, TrenchFET®
Wāhanga wahi : Active
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 12V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 60A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 5.8 mOhm @ 15A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 150nC @ 4.5V
Vgs (Max) : ±8V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 9100pF @ 6V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 68W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® SO-8
Paepae / Take : PowerPAK® SO-8