Vishay Siliconix - SQS415ENW-T1_GE3

KEY Part #: K6420490

SQS415ENW-T1_GE3 Utu (USD) [200934Stock Ngahau]

  • 1 pcs$0.18408

Te waahanga waahanga:
SQS415ENW-T1_GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET P-CH 40V PPAK 1212-8W.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kotahi, Te Tauira P taraihi Mana, Transistors - Bipolar (BJT) - RF, Tauhoko - TRIACs, Tauhoko - SCR - Mahi, Transistors - Bipolar (BJT) - Kotahi, I mua i te m and Diode - Kaiwhiwhi - Kotahi ...
Whakapai Tinana:
We specialize in Vishay Siliconix SQS415ENW-T1_GE3 electronic components. SQS415ENW-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQS415ENW-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQS415ENW-T1_GE3 Nga Hua Hua

Te waahanga waahanga : SQS415ENW-T1_GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET P-CH 40V PPAK 1212-8W
Toa : Automotive, AEC-Q101, TrenchFET®
Wāhanga wahi : Active
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 40V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 16A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 16.1 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 82nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 4825pF @ 25V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 62.5W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® 1212-8W
Paepae / Take : PowerPAK® 1212-8W

Kia Korero Ma Te Korero