SIS888DN-T1-GE3 Utu (USD) [120687Stock Ngahau]
- 1 pcs$0.30647
- 3,000 pcs$0.28779
- Te waahanga waahanga:
- SIS888DN-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 150V 20.2A 1212-8S.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Diode - Kaiwhiwhi - Kotahi, Transistors - Bipolar (BJT) - RF, Diode - RF, Transistors - IGBTs - Kotahi, Transistors - Bipolar (BJT) - Kotahi and Diode - Zener - Tuhinga ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SIS888DN-T1-GE3 electronic components. SIS888DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS888DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS888DN-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SIS888DN-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CH 150V 20.2A 1212-8S
Toa :
ThunderFET®
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
150V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
20.2A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
7.5V, 10V
Rds On (Max) @ Id, Vgs :
58 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
4.2V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
14.5nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
420pF @ 75V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
52W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TA)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
PowerPAK® 1212-8S (3.3x3.3)
Paepae / Take :
PowerPAK® 1212-8S
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