Taiwan Semiconductor Corporation - ES3B M6G

KEY Part #: K6458064

ES3B M6G Utu (USD) [838004Stock Ngahau]

  • 1 pcs$0.04414

Te waahanga waahanga:
ES3B M6G
Kaihanga:
Taiwan Semiconductor Corporation
Whakaahuatanga Taipitopito:
DIODE GEN PURP 100V 3A DO214AB.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - Bipolar (BJT) - Kotahi, Transistors - FETs, MOSFETs - Kotahi, Diode - Nga Kete Aiana, Diode - Zener - Kotahi and Tauhoko - SCR - Mahi ...
Whakapai Tinana:
We specialize in Taiwan Semiconductor Corporation ES3B M6G electronic components. ES3B M6G can be shipped within 24 hours after order. If you have any demands for ES3B M6G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES3B M6G Nga Hua Hua

Te waahanga waahanga : ES3B M6G
Kaihanga : Taiwan Semiconductor Corporation
Whakaahuatanga : DIODE GEN PURP 100V 3A DO214AB
Toa : -
Wāhanga wahi : Not For New Designs
Momo Diode : Standard
Huringa - DC Revers (Vr) (Max) : 100V
Koinei - He Whakatau I Whakatauhia (Io) : 3A
Tauira - Whakamua (Vf) (Max) @ If : 950mV @ 3A
Tere : Fast Recovery =< 500ns, > 200mA (Io)
Te Whakahoutanga Whakaora (trr) : 35ns
Ko tenei - Te Hurorirori Reihi @ Ngar : 10µA @ 100V
Te Aukati @ Vr, F : 45pF @ 4V, 1MHz
Momo Momo : Surface Mount
Paepae / Take : DO-214AB, SMC
Paetukutuku Pūrere Kaiwhakarato : DO-214AB (SMC)
Taumaha Mahi - Kawenga : -55°C ~ 150°C

Kia Korero Ma Te Korero
  • BYM07-400-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 500MA DO213. Rectifiers 400 Volt 0.5A 50ns Glass Passivated

  • EGL34G-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 500MA DO213. Rectifiers 0.5Amp 400 Volt 50ns

  • GL34B-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 500MA DO213. Rectifiers 100 Volt 0.5 Amp 10 Amp IFSM

  • GL34G-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 500MA DO213. Rectifiers 400 Volt 0.5 Amp 10 Amp IFSM

  • GL34D-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 500MA DO213. Rectifiers 200 Volt 0.5 Amp 10 Amp IFSM

  • GL34J-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 500MA DO213. Rectifiers 600 Volt 0.5 Amp 10 Amp IFSM