Vishay Siliconix - SIE820DF-T1-GE3

KEY Part #: K6404526

[1980Stock Ngahau]


    Te waahanga waahanga:
    SIE820DF-T1-GE3
    Kaihanga:
    Vishay Siliconix
    Whakaahuatanga Taipitopito:
    MOSFET N-CH 20V 50A POLARPAK.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - FETs, MOSFETs - Arrays, Diode - RF, Transistors - Takenga Motuhake, Diode - Zener - Tuhinga, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhou - IGBT - Mahi, Diode - Rectifiers - Arrays and Transistors - JFET ...
    Whakapai Tinana:
    We specialize in Vishay Siliconix SIE820DF-T1-GE3 electronic components. SIE820DF-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIE820DF-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SIE820DF-T1-GE3 Nga Hua Hua

    Te waahanga waahanga : SIE820DF-T1-GE3
    Kaihanga : Vishay Siliconix
    Whakaahuatanga : MOSFET N-CH 20V 50A POLARPAK
    Toa : TrenchFET®
    Wāhanga wahi : Obsolete
    Momo FET : N-Channel
    Hangarau : MOSFET (Metal Oxide)
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 20V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 50A (Tc)
    Koraha Motuhake (RW RW On, Min Rds I) : 2.5V, 4.5V
    Rds On (Max) @ Id, Vgs : 3.5 mOhm @ 18A, 4.5V
    Vgs (th) (Max) @ Id : 2V @ 250µA
    Kaari Gate (Qg) (Max) @ Vgs : 143nC @ 10V
    Vgs (Max) : ±12V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 4300pF @ 10V
    Āhuahanga FET : -
    Te Whakamau Kaha (Max) : 5.2W (Ta), 104W (Tc)
    Taumaha Mahi : -55°C ~ 150°C (TJ)
    Momo Momo : Surface Mount
    Paetukutuku Pūrere Kaiwhakarato : 10-PolarPAK® (S)
    Paepae / Take : 10-PolarPAK® (S)

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