SI7962DP-T1-E3 Utu (USD) [46382Stock Ngahau]
- 1 pcs$0.84300
- 3,000 pcs$0.78907
- Te waahanga waahanga:
- SI7962DP-T1-E3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET 2N-CH 40V 7.1A PPAK SO-8.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - IGBTs - Kotahi, Tauhoko - DIACs, SIDACs, Transistors - Whakahoahoa Whakahoahoa, Diode - RF, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - FET, MOSFETs - RF, Transistors - FETs, MOSFETs - Kotahi and Transistors - Bipolar (BJT) - RF ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SI7962DP-T1-E3 electronic components. SI7962DP-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7962DP-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7962DP-T1-E3 Nga Hua Hua
Te waahanga waahanga :
SI7962DP-T1-E3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET 2N-CH 40V 7.1A PPAK SO-8
Toa :
TrenchFET®
Wāhanga wahi :
Active
Momo FET :
2 N-Channel (Dual)
Āhuahanga FET :
Standard
Whakahinuhinu ki te Rauemi Waiata (Vds) :
40V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
7.1A
Rds On (Max) @ Id, Vgs :
17 mOhm @ 11.1A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
70nC @ 10V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
-
Te Mana - Max :
1.4W
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paepae / Take :
PowerPAK® SO-8 Dual
Paetukutuku Pūrere Kaiwhakarato :
PowerPAK® SO-8 Dual
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