Infineon Technologies - IPP12CNE8N G

KEY Part #: K6409810

[153Stock Ngahau]


    Te waahanga waahanga:
    IPP12CNE8N G
    Kaihanga:
    Infineon Technologies
    Whakaahuatanga Taipitopito:
    MOSFET N-CH 85V 67A TO-220.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhou - IGBT - Mahi, Transistors - IGBTs - Kotahi, Tauhoko - TRIACs, Transistors - Bipolar (BJT) - Kotahi, Diode - Kaiwhiwhi - Kotahi, Diode - RF, Transistors - Takenga Motuhake and Tauhoko - SCR - Mahi ...
    Whakapai Tinana:
    We specialize in Infineon Technologies IPP12CNE8N G electronic components. IPP12CNE8N G can be shipped within 24 hours after order. If you have any demands for IPP12CNE8N G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPP12CNE8N G Nga Hua Hua

    Te waahanga waahanga : IPP12CNE8N G
    Kaihanga : Infineon Technologies
    Whakaahuatanga : MOSFET N-CH 85V 67A TO-220
    Toa : OptiMOS™
    Wāhanga wahi : Obsolete
    Momo FET : N-Channel
    Hangarau : MOSFET (Metal Oxide)
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 85V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 67A (Tc)
    Koraha Motuhake (RW RW On, Min Rds I) : 10V
    Rds On (Max) @ Id, Vgs : 12.9 mOhm @ 67A, 10V
    Vgs (th) (Max) @ Id : 4V @ 83µA
    Kaari Gate (Qg) (Max) @ Vgs : 64nC @ 10V
    Vgs (Max) : ±20V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 4340pF @ 40V
    Āhuahanga FET : -
    Te Whakamau Kaha (Max) : 125W (Tc)
    Taumaha Mahi : -55°C ~ 175°C (TJ)
    Momo Momo : Through Hole
    Paetukutuku Pūrere Kaiwhakarato : PG-TO220-3
    Paepae / Take : TO-220-3