SISS23DN-T1-GE3 Utu (USD) [252282Stock Ngahau]
- 1 pcs$0.14661
- 3,000 pcs$0.13796
- Te waahanga waahanga:
- SISS23DN-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET P-CH 20V 50A PPAK 1212-8S.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Kotahi, Diode - RF, Tauhoko - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhou - IGBT - Mahi, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - FETs, MOSFETs - Kotahi and Diode - Zener - Tuhinga ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SISS23DN-T1-GE3 electronic components. SISS23DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS23DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISS23DN-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SISS23DN-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET P-CH 20V 50A PPAK 1212-8S
Toa :
TrenchFET®
Wāhanga wahi :
Active
Momo FET :
P-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
20V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
50A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
4.5 mOhm @ 20A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
300nC @ 10V
Vgs (Max) :
±8V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
8840pF @ 15V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
4.8W (Ta), 57W (Tc)
Taumaha Mahi :
-50°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
PowerPAK® 1212-8S (3.3x3.3)
Paepae / Take :
8-PowerVDFN
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