Vishay Siliconix - SI5402DC-T1-E3

KEY Part #: K6406080

[1444Stock Ngahau]


    Te waahanga waahanga:
    SI5402DC-T1-E3
    Kaihanga:
    Vishay Siliconix
    Whakaahuatanga Taipitopito:
    MOSFET N-CH 30V 4.9A 1206-8.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Takenga Motuhake, Diode - Zener - Tuhinga, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kotahi, Transistors - Whakahoahoa Whakahoahoa, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays and Transistors - JFET ...
    Whakapai Tinana:
    We specialize in Vishay Siliconix SI5402DC-T1-E3 electronic components. SI5402DC-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI5402DC-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI5402DC-T1-E3 Nga Hua Hua

    Te waahanga waahanga : SI5402DC-T1-E3
    Kaihanga : Vishay Siliconix
    Whakaahuatanga : MOSFET N-CH 30V 4.9A 1206-8
    Toa : TrenchFET®
    Wāhanga wahi : Obsolete
    Momo FET : N-Channel
    Hangarau : MOSFET (Metal Oxide)
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 4.9A (Ta)
    Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 35 mOhm @ 4.9A, 10V
    Vgs (th) (Max) @ Id : 1V @ 250µA (Min)
    Kaari Gate (Qg) (Max) @ Vgs : 20nC @ 10V
    Vgs (Max) : ±20V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : -
    Āhuahanga FET : -
    Te Whakamau Kaha (Max) : 1.3W (Ta)
    Taumaha Mahi : -55°C ~ 150°C (TJ)
    Momo Momo : Surface Mount
    Paetukutuku Pūrere Kaiwhakarato : 1206-8 ChipFET™
    Paepae / Take : 8-SMD, Flat Lead