Vishay Siliconix - SQ4431EY-T1_GE3

KEY Part #: K6420384

SQ4431EY-T1_GE3 Utu (USD) [190084Stock Ngahau]

  • 1 pcs$0.19459
  • 2,500 pcs$0.16445

Te waahanga waahanga:
SQ4431EY-T1_GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET P-CH 30V 10.8A 8SOIC.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - FETs, MOSFETs - Kotahi, Diode - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Diode - Zener - Tuhinga, Transistors - JFET and Transistors - Bipolar (BJT) - RF ...
Whakapai Tinana:
We specialize in Vishay Siliconix SQ4431EY-T1_GE3 electronic components. SQ4431EY-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ4431EY-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQ4431EY-T1_GE3 Nga Hua Hua

Te waahanga waahanga : SQ4431EY-T1_GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET P-CH 30V 10.8A 8SOIC
Toa : Automotive, AEC-Q101, TrenchFET®
Wāhanga wahi : Active
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 10.8A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 30 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1265pF @ 15V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 6W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : 8-SO
Paepae / Take : 8-SOIC (0.154", 3.90mm Width)

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