Global Power Technologies Group - GHIS080A120S-A2

KEY Part #: K6532555

GHIS080A120S-A2 Utu (USD) [1951Stock Ngahau]

  • 1 pcs$25.15719
  • 10 pcs$23.67648
  • 25 pcs$22.19670

Te waahanga waahanga:
GHIS080A120S-A2
Kaihanga:
Global Power Technologies Group
Whakaahuatanga Taipitopito:
IGBT BUCK CHOP 1200V 160A SOT227.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - FETs, MOSFETs - Kotahi, Transistors - Bipolar (BJT) - RF, Tauhoko - SCR - Mahi, Transistors - Whakahoahoa Whakahoahoa, Diode - RF, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - Bipolar (BJT) - Arrays and Taumanako - SCR ...
Whakapai Tinana:
We specialize in Global Power Technologies Group GHIS080A120S-A2 electronic components. GHIS080A120S-A2 can be shipped within 24 hours after order. If you have any demands for GHIS080A120S-A2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GHIS080A120S-A2 Nga Hua Hua

Te waahanga waahanga : GHIS080A120S-A2
Kaihanga : Global Power Technologies Group
Whakaahuatanga : IGBT BUCK CHOP 1200V 160A SOT227
Toa : -
Wāhanga wahi : Active
Momo IGBT : Trench Field Stop
Hōutuutu : Single
Paati - Whakahoki Kaikaha Kohikohi (Max) : 1200V
Te Oranga - Te Kaikohi (Ic) (Max) : 160A
Te Mana - Max : 480W
Vce (on) (Max) @ Vge, Ic : 2.6V @ 15V, 80A
I tenei wa - Kohinga Kohinga (Max) : 2mA
Te Mahinga Whakauru (Kati) @ Vce : 10.3nF @ 30V
Whakautu : Standard
NTC Thermistor : No
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Chassis Mount
Paepae / Take : SOT-227-4, miniBLOC
Paetukutuku Pūrere Kaiwhakarato : SOT-227

Kia Korero Ma Te Korero
  • VS-ENQ030L120S

    Vishay Semiconductor Diodes Division

    IGBT 1200V 61A 216W EMIPAK-1B. Rectifiers 30A Neutral Point Clamp Topology

  • VS-ETF150Y65N

    Vishay Semiconductor Diodes Division

    IGBT 650V 150A EMIPAK-2B.

  • CPV362M4F

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 8.8A IMS-2.

  • CPV363M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6A IMS-2.

  • A2C35S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 35A ACEPACK2.

  • A2C25S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.